Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
Identifieur interne : 00C404 ( Main/Repository ); précédent : 00C403; suivant : 00C405Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
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Abstract
The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well (QW) surrounded by (In)GaAsP direct barrier layers is investigated. We found that growth pause annealing with AsH3, performed immediately before and after the growth of the QW, significantly improves the optical quality of InGaAsN QW with (In)GaAsP direct barriers. The utilization of larger band gap barrier materials, such as InGaAsP or GaAsP, will potentially lead to reduced carrier leakage from the QW laser structures. © 2003 American Institute of Physics.
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Mawst</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0209474</idno><date when="2003-05-05">2003-05-05</date><idno type="stanalyst">PASCAL 03-0209474 AIP</idno><idno type="RBID">Pascal:03-0209474</idno><idno type="wicri:Area/Main/Corpus">00D708</idno><idno type="wicri:Area/Main/Repository">00C404</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Photoluminescence</term><term>Semiconductor growth</term><term>Semiconductor quantum wells</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115K</term><term>7855C</term><term>6172C</term><term>7867D</term><term>8115G</term><term>8105E</term><term>6865F</term><term>8107S</term><term>Etude expérimentale</term><term>Puits quantique semiconducteur</term><term>Photoluminescence</term><term>Recuit</term><term>Epitaxie phase vapeur</term><term>Méthode MOCVD</term><term>Croissance semiconducteur</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The metalorganic chemical vapor deposition of a highly strained InGaAsN quantum-well (QW) surrounded by (In)GaAsP direct barrier layers is investigated. We found that growth pause annealing with AsH<sub>3</sub>, performed immediately before and after the growth of the QW, significantly improves the optical quality of InGaAsN QW with (In)GaAsP direct barriers. 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